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| SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.01 @ VGS = 4.5 V ID (A)a 85 a 75 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N03-07P DS S N-Channel MOSFET Top View SUB85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85a 64 240 75 280 107c 3.75 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71147 S-00757--Rev. B, 10-Apr-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 1.4 Unit _C/W 2-1 SUP/SUB85N03-07P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Drain-Source On-State R i Drain Source On State Resistancea VGS = 10 V, ID = 30 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 120 0.006 0.007 0.011 0.015 0.01 S W 30 V 1 2 "100 1 50 250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0 18 W V, 0.18 ID ^ 85 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 15 V, VGS = 10 V ID = 85 A V V, VGS = 0 V, VDS = 25 V, f = 1 MHz 3720 715 370 60 13 10 11 70 50 105 25 140 ns 100 200 120 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 85 A, VGS = 0 V IF = 85 A, di/dt = 100 A/ms 1.2 55 85 A 200 1.5 100 V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71147 S-00757--Rev. B, 10-Apr-00 SUP/SUB85N03-07P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 5V 100 120 Vishay Siliconix Transfer Characteristics 80 150 4V 100 60 40 TC = 125_C 25_C -55_C 50 2V 3V 20 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C 25_C 80 125_C 60 r DS(on) - On-Resistance ( W ) 100 g fs - Transconductance (S) 0.015 0.020 On-Resistance vs. Drain Current 0.010 VGS = 4.5 V VGS = 10 V 40 0.005 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 5000 Ciss 10 Gate Charge 4000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 VDS = 50 V ID = 85 A 3000 6 2000 Coss 1000 Crss 0 0 6 12 18 24 30 4 2 0 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) Document Number: 71147 S-00757--Rev. B, 10-Apr-00 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB85N03-07P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 40 Drain Source Breakdown vs. Junction Temperature 38 100 IAV (A) @ TA = 25_C I Dav (a) 10 IAV (A) @ TA = 150_C 1 V (BR)DSS (V) 36 ID = 250 mA 34 32 0.1 0.00001 0.0001 0.001 0.01 0.1 1 30 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71147 S-00757--Rev. B, 10-Apr-00 SUP/SUB85N03-07P New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area 80 100 I D - Drain Current (A) I D - Drain Current (A) 10 ms 100 ms 10 Limited by rDS(on) 60 1 ms 10 ms 100 ms dc 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71147 S-00757--Rev. B, 10-Apr-00 www.vishay.com S FaxBack 408-970-5600 2-5 |
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